Statistical variability in fully depleted SOI MOSFETs due to random dopant fluctuations in the source and drain extensions

Markov, S., Cheng, B. and Asenov, A. (2012) Statistical variability in fully depleted SOI MOSFETs due to random dopant fluctuations in the source and drain extensions. IEEE Electron Device Letters, 33(3), pp. 315-317. (doi: 10.1109/LED.2011.2179114)

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Publisher's URL: http://dx.doi.org/10.1109/LED.2011.2179114

Abstract

Simulations of up to 10 000 fully depleted thin-body silicon-on-insulator MOSFETs show that the standard deviation of the threshold voltage cannot be adequately used as a sole metric of device variability in such transistors. This is due to a sharp departure from normality of the threshold voltage distribution, and an enhanced influence of the source/drain-dopant fluctuations on the on-current and short-channel effects of the fully depleted thin-body silicon-on-insulator transistors. Both aspects have great ramifications for statistical compact models and for low-power SRAM designs.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Markov, Dr Stanislav and Cheng, Dr Binjie and Asenov, Professor Asen
Authors: Markov, S., Cheng, B., and Asenov, A.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:IEEE Electron Device Letters
ISSN:0741-3106

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Project CodeAward NoProject NamePrincipal InvestigatorFunder's NameFunder RefLead Dept
421321Meeting the design challenges of the nano CMOS electronicsAsen AsenovEngineering & Physical Sciences Research Council (EPSRC)EP/E003125/1Electronic and Nanoscale Engineering