Markov, S., Cheng, B. and Asenov, A. (2012) Statistical variability in fully depleted SOI MOSFETs due to random dopant fluctuations in the source and drain extensions. IEEE Electron Device Letters, 33(3), pp. 315-317. (doi: 10.1109/LED.2011.2179114)
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Publisher's URL: http://dx.doi.org/10.1109/LED.2011.2179114
Abstract
Simulations of up to 10 000 fully depleted thin-body silicon-on-insulator MOSFETs show that the standard deviation of the threshold voltage cannot be adequately used as a sole metric of device variability in such transistors. This is due to a sharp departure from normality of the threshold voltage distribution, and an enhanced influence of the source/drain-dopant fluctuations on the on-current and short-channel effects of the fully depleted thin-body silicon-on-insulator transistors. Both aspects have great ramifications for statistical compact models and for low-power SRAM designs.
Item Type: | Articles |
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Status: | Published |
Refereed: | Yes |
Glasgow Author(s) Enlighten ID: | Markov, Dr Stanislav and Cheng, Dr Binjie and Asenov, Professor Asen |
Authors: | Markov, S., Cheng, B., and Asenov, A. |
College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
Journal Name: | IEEE Electron Device Letters |
ISSN: | 0741-3106 |
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