Gadolinium gallium oxide/gallium oxide insulators on GaAs and In0.53Ga0.47As n+ MOS capacitors: The interface state model and beyond

Paterson, G.W. , Holland, M.C., Bentley, S.J., Thayne, I.G. and Long, A.R. (2011) Gadolinium gallium oxide/gallium oxide insulators on GaAs and In0.53Ga0.47As n+ MOS capacitors: The interface state model and beyond. Journal of Applied Physics, 109(12), p. 124112. (doi:10.1063/1.3599895)

Full text not currently available from Enlighten.

Publisher's URL: http://dx.doi.org/10.1063/1.3599895


Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Thayne, Professor Iain and Long, Professor Andrew and Bentley, Dr Steven and Paterson, Dr Gary and Holland, Dr Martin
Authors: Paterson, G.W., Holland, M.C., Bentley, S.J., Thayne, I.G., and Long, A.R.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
College of Science and Engineering > School of Physics and Astronomy
Journal Name:Journal of Applied Physics
ISSN:0021-8979

University Staff: Request a correction | Enlighten Editors: Update this record

Project CodeAward NoProject NamePrincipal InvestigatorFunder's NameFunder RefLead Dept
452481Silicon compatible process modules for III-V electronic devices.Iain ThayneEngineering & Physical Sciences Research Council (EPSRC)EP/F002610/1Electronic and Nanoscale Engineering
358573Sub 100nm 111-V MOSFET's for Digital ApplicationsIain ThayneEngineering & Physical Sciences Research Council (EPSRC)GR/S61218/01Electronic and Nanoscale Engineering