Paterson, G.W. , Holland, M.C., Thayne, I.G. and Long, A.R. (2011) Broadening of metal-oxide-semiconductor admittance characteristics: Measurement, sources, and its effects on interface state density analyses. Journal of Applied Physics, 110(11), p. 114115. (doi: 10.1063/1.3665720)
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Publisher's URL: http://dx.doi.org/10.1063/1.3665720
Item Type: | Articles |
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Status: | Published |
Refereed: | Yes |
Glasgow Author(s) Enlighten ID: | Thayne, Prof Iain and Long, Professor Andrew and Paterson, Dr Gary and Holland, Dr Martin |
Authors: | Paterson, G.W., Holland, M.C., Thayne, I.G., and Long, A.R. |
College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering College of Science and Engineering > School of Physics and Astronomy |
Journal Name: | Journal of Applied Physics |
ISSN: | 0021-8979 |
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