Broadening of metal-oxide-semiconductor admittance characteristics: Measurement, sources, and its effects on interface state density analyses

Paterson, G.W. , Holland, M.C., Thayne, I.G. and Long, A.R. (2011) Broadening of metal-oxide-semiconductor admittance characteristics: Measurement, sources, and its effects on interface state density analyses. Journal of Applied Physics, 110(11), p. 114115. (doi:10.1063/1.3665720)

Paterson, G.W. , Holland, M.C., Thayne, I.G. and Long, A.R. (2011) Broadening of metal-oxide-semiconductor admittance characteristics: Measurement, sources, and its effects on interface state density analyses. Journal of Applied Physics, 110(11), p. 114115. (doi:10.1063/1.3665720)

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Publisher's URL: http://dx.doi.org/10.1063/1.3665720


Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Thayne, Professor Iain and Long, Professor Andrew and Paterson, Dr Gary and Holland, Dr Martin
Authors: Paterson, G.W., Holland, M.C., Thayne, I.G., and Long, A.R.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
College of Science and Engineering > School of Physics and Astronomy
Journal Name:Journal of Applied Physics
ISSN:0021-8979

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Project CodeAward NoProject NamePrincipal InvestigatorFunder's NameFunder RefLead Dept
452481Silicon compatible process modules for III-V electronic devices.Iain ThayneEngineering & Physical Sciences Research Council (EPSRC)EP/F002610/1Electronic and Nanoscale Engineering