High responsivity silicon MOS phototransistors

Abid, K., Khokhar, A. Z. and Rahman, F. (2011) High responsivity silicon MOS phototransistors. Sensors and Actuators A: Physical, 172(2), pp. 434-439. (doi: 10.1016/j.sna.2011.10.008)

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We describe a metal-oxide silicon (MOS) phototransistor that relies on a novel lateral doping scheme that creates a p–i–n junction configuration for light detection. This is essentially a hybrid device with the horizontal structure of a p–i–n diode and the vertical structure of a MOS field-effect transistor. The lateral p–i–n diode detects light whereas the gate can be used to change the current flowing through the device; making it appear as a MOSFET. This feature makes it easy to integrate it with other conventional MOSFETs on a CMOS process flow. The device shows high optical responsivities that persist to wavelengths in the near-ultraviolet region. The fabrication of the device as well as its electrical and optical characteristics is described.

Item Type:Articles
Glasgow Author(s) Enlighten ID:Khokhar, Dr Ali and Rahman, Dr Faiz
Authors: Abid, K., Khokhar, A. Z., and Rahman, F.
College/School:College of Science and Engineering > School of Engineering > Biomedical Engineering
College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Sensors and Actuators A: Physical
Published Online:13 October 2011

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