Inx(GayAl1−y)1−xAs quaternary alloys for quantum dot intermediate band solar cells

Linares, P.G., Farmer, C.D., Antolín, E., Chakrabarti, S., Sánchez, A.M., Ben, T., Molina, S.I., Stanley, C.R., Martí, A. and Luque, A. (2010) Inx(GayAl1−y)1−xAs quaternary alloys for quantum dot intermediate band solar cells. Energy Procedia, 2(1), pp. 133-141. (doi: 10.1016/j.egypro.2010.07.019)

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Abstract

Within the context of quantum dot Intermediate Band Solar Cells (QD-IBSC), it is of interest to investigate the maximum value that can be achieved for the smaller of the transitions (EL), since values larger than 0.3 eV are required for improved performance. This work provides both theoretical and experimental arguments to verify the shift of the IB position to deeper energies by using an In<sub>x</sub>(Ga<sub>y</sub>Al<sub>1−y</sub>)<sub>1−x</sub>As capping layer, fulfilling the double function of increasing the QD size and eliminating the discontinuity in the conduction band between the quaternary cap and the GaAs barrier.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Farmer, Dr Corrie and Stanley, Professor Colin
Authors: Linares, P.G., Farmer, C.D., Antolín, E., Chakrabarti, S., Sánchez, A.M., Ben, T., Molina, S.I., Stanley, C.R., Martí, A., and Luque, A.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Energy Procedia
ISSN (Online):1876-6102
Published Online:04 August 2010

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