Texture, twinning and metastable "tetragonal" phase in ultrathin films of HfO2 on a Si substrate

MacLaren, I., Ras, T., MacKenzie, M., Craven, A.J., McComb, D.W. and De Gendt, S. (2009) Texture, twinning and metastable "tetragonal" phase in ultrathin films of HfO2 on a Si substrate. Journal of the Electrochemical Society, 156(8), G103-G108. (doi:10.1149/1.3141705)

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Abstract

Thin HfO<sub>2</sub> films grown on the lightly oxidised surface of (100) Si wafers have been examined using dark-field transmission electron microscopy and selected area electron diffraction in plan view. The polycrystalline film has a grain size of the order of 100 nm and many of the grains show evidence of twinning on (110) and (001) planes. Diffraction studies showed that the film had a strong [110] out-of-plane texture, and that a tiny volume fraction of a metastable (possibly tetragonal) phase was retained. The reasons for the texture, twinning and the retention of the metastable phase are discussed.

Item Type:Articles
Additional Information:Except as provided under U.S. copyright law, this work may not be reproduced, resold, distributed, or modified without the express permission of The Electrochemical Society (ECS). The archival version of this work was published in Journal of the Electrochemical Society 156 (8) : G103-G108.
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:MacLaren, Dr Ian and MacKenzie, Dr Maureen and Craven, Professor Alan
Authors: MacLaren, I., Ras, T., MacKenzie, M., Craven, A.J., McComb, D.W., and De Gendt, S.
Subjects:T Technology > TP Chemical technology
College/School:College of Science and Engineering > School of Physics and Astronomy
Research Group:Solid State Physics
Journal Name:Journal of the Electrochemical Society
Publisher:The Electrochemical Society
ISSN:0013-4651
ISSN (Online):1945-7111
Published Online:01 January 2009
Copyright Holders:Copyright The Electrochemical Society Inc. © 2009. All rights reserved.
First Published:First published in Journal of the Electrochemical Society 156 (8) : G103-G108
Publisher Policy:Reproduced in accordance with the copyright policy of the publisher.

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Project CodeAward NoProject NamePrincipal InvestigatorFunder's NameFunder RefLead Dept
350671Chemistry, structure and bonding in high-k gate oxide stacksAlan CravenEngineering & Physical Sciences Research Council (EPSRC)GR/S44280/01Physics and Astronomy