Ohmic contacts to n-type germanium with low specific contact resistivity

Gallacher, K. , Velha, P., Paul, D.J. , MacLaren, I. , Myronov, M. and Leadley, D.R. (2012) Ohmic contacts to n-type germanium with low specific contact resistivity. Applied Physics Letters, 100(2), 022113. (doi: 10.1063/1.3676667)



Publisher's URL: http://dx.doi.org/10.1063/1.3676667


A low temperature nickel process has been developed that produces Ohmic contacts to n-type germanium with specific contact resistivities down to (2.3 ± 1.8) x10<sup>-7</sup> Ω-cm<sup>2</sup> for anneal temperatures of 340 degC. The low contact resistivity is attributed to the low resistivity NiGe phase which was identified using electron diffraction in a transmission electron microscope. Electrical results indicate that the linear Ohmic behaviour of the contact is attributed to quantum mechanical tunnelling through the Schottky barrier formed between the NiGe alloy and the heavily doped n-Ge.<p></p>

Item Type:Articles
Glasgow Author(s) Enlighten ID:Velha, Mr Philippe and MacLaren, Dr Ian and Paul, Professor Douglas and Gallacher, Dr Kevin
Authors: Gallacher, K., Velha, P., Paul, D.J., MacLaren, I., Myronov, M., and Leadley, D.R.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
College of Science and Engineering > School of Physics and Astronomy
Research Group:Electronics and Nanoscale Engineering Research Division
Journal Name:Applied Physics Letters
Journal Abbr.:Appl. Phys. Lett.
Publisher:American Institute of Physics
ISSN (Online):1077-3118
Published Online:13 January 2012
Copyright Holders:Copyright © 2012 American Institute of Physics
First Published:First published in Applied Physics Letters 100(2):022113
Publisher Policy:Reproduced in accordance with the copyright policy of the publisher

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Project CodeAward NoProject NamePrincipal InvestigatorFunder's NameFunder RefLead Dept
523621Room Temperature Terahertz Quantum Cascade Lasers on Silicon SubstratesD.J. PaulEngineering & Physical Sciences Research Council (EPSRC)EP/H02364X/1Electronic and Nanoscale Engineering