Investigation of loading effect on power performance for Planar Gunn diodes using load-pull measurement technique

Li, C., Lok, L.B., Khalid, A. , Thayne, I.G. and Cumming, D.R.S. (2011) Investigation of loading effect on power performance for Planar Gunn diodes using load-pull measurement technique. IEEE Microwave and Wireless Components Letters, 21(10), pp. 556-558. (doi: 10.1109/LMWC.2011.2163496)

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Publisher's URL: http://dx.doi.org/10.1109/LMWC.2011.2163496

Abstract

A one-port load-pull measurement has been carried out in order to investigate the effect of loading on the RF power performance of a planar Gunn diode operating in the transit-time mode at 102 GHz. A W-band manual E-H tuner was applied between a waveguide mixer and a wafer probe to vary the load impedance on the Gunn diode. It has been found that more than 25 dB variation of output power was obtained by systematically adjusting the tuner. By de-embedding the S-parameters of the probe, E-H tuner and mixer, the relationship between RF power and load impedance for the planar Gunn diode was derived. This method is extremely useful for assisting the design of matching networks to improve power output of one-port oscillator devices.

Item Type:Articles (Letter)
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Thayne, Prof Iain and Li, Professor Chong and Cumming, Professor David and Lok, Dr Lai Bun and Khalid, Dr Ata-Ul-Habib
Authors: Li, C., Lok, L.B., Khalid, A., Thayne, I.G., and Cumming, D.R.S.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Research Group:MST
Journal Name:IEEE Microwave and Wireless Components Letters
Journal Abbr.:MWCL
ISSN:1531-1309
Published Online:01 October 2011

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Project CodeAward NoProject NamePrincipal InvestigatorFunder's NameFunder RefLead Dept
449212TeraHertz planar Gunn diodesDavid CummingEngineering & Physical Sciences Research Council (EPSRC)EP/F014791/1Electronic and Nanoscale Engineering