Li, C., Khalid, A. , Caldwell, S.H.P., Holland, M., Dunn, G.M., Thayne, I.G. and Cumming, D.R.S. (2011) Design, fabrication and characterization of In0.23Ga0.77As-channel planar Gunn diodes for millimeter wave applications. Solid-State Electronics, 64(1), pp. 67-72. (doi: 10.1016/j.sse.2011.07.008)
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Abstract
We present detailed design, fabrication and characterization of In<sub>0.23</sub>Ga<sub>0.77</sub>As-based planar Gunn diodes in this paper. The devices have AlGaAs/InGaAs/AlGaAs heterojunctions that were grown on a semi-insulating GaAs wafer using molecular beam epitaxy technology. Electron beam lithography was used to define anode and cathode terminal patterns. Devices with various anode–cathode separations (e.g. 4–1.4 µm) were fabricated on the same chip. Spectrum measurements showed oscillation frequencies between 36 GHz and 118 GHz in the fundamental transit-time mode of operation. These devices show great potential as millimeter wave and sub-millimeter wave signal sources for their small size, MMIC compatibility and lithographically controlled oscillation frequencies.
Item Type: | Articles |
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Status: | Published |
Refereed: | Yes |
Glasgow Author(s) Enlighten ID: | Thayne, Prof Iain and Li, Professor Chong and Cumming, Professor David and Khalid, Dr Ata-Ul-Habib and Holland, Dr Martin |
Authors: | Li, C., Khalid, A., Caldwell, S.H.P., Holland, M., Dunn, G.M., Thayne, I.G., and Cumming, D.R.S. |
College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
Research Group: | MST |
Journal Name: | Solid-State Electronics |
ISSN: | 0038-1101 |
ISSN (Online): | 1879-2405 |
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