Design, fabrication and characterization of In0.23Ga0.77As-channel planar Gunn diodes for millimeter wave applications

Li, C., Khalid, A. , Caldwell, S.H.P., Holland, M., Dunn, G.M., Thayne, I.G. and Cumming, D.R.S. (2011) Design, fabrication and characterization of In0.23Ga0.77As-channel planar Gunn diodes for millimeter wave applications. Solid-State Electronics, 64(1), pp. 67-72. (doi:10.1016/j.sse.2011.07.008)

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Abstract

We present detailed design, fabrication and characterization of In<sub>0.23</sub>Ga<sub>0.77</sub>As-based planar Gunn diodes in this paper. The devices have AlGaAs/InGaAs/AlGaAs heterojunctions that were grown on a semi-insulating GaAs wafer using molecular beam epitaxy technology. Electron beam lithography was used to define anode and cathode terminal patterns. Devices with various anode–cathode separations (e.g. 4–1.4 µm) were fabricated on the same chip. Spectrum measurements showed oscillation frequencies between 36 GHz and 118 GHz in the fundamental transit-time mode of operation. These devices show great potential as millimeter wave and sub-millimeter wave signal sources for their small size, MMIC compatibility and lithographically controlled oscillation frequencies.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Thayne, Professor Iain and Li, Dr Chong and Cumming, Professor David and Khalid, Dr Ata-ul-Habib and Holland, Dr Martin
Authors: Li, C., Khalid, A., Caldwell, S.H.P., Holland, M., Dunn, G.M., Thayne, I.G., and Cumming, D.R.S.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Research Group:MST
Journal Name:Solid-State Electronics
ISSN:0038-1101
ISSN (Online):1879-2405

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Project CodeAward NoProject NamePrincipal InvestigatorFunder's NameFunder RefLead Dept
449212TeraHertz planar Gunn diodesDavid CummingEngineering & Physical Sciences Research Council (EPSRC)EP/F014791/1Electronic and Nanoscale Engineering