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Direct extraction and numerical simulation of the base and collector delay times in double heterojunction bipolar transistors

Sotoodeh, M., Khalid, A.H., Sheng, H., Amin, F.A., Gokdemir, T., Rezazadeh, A.A., Knights, A.P., and Button, C.C. (1999) Direct extraction and numerical simulation of the base and collector delay times in double heterojunction bipolar transistors. IEEE Transactions on Electron Devices, 46 (6). pp. 1081-1086. ISSN 0018-9383 (doi:10.1109/16.766867 )

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Abstract

A new method is presented to evaluate the base and collector transit times, τB and τC in heterojunction bipolar transistors (BBT's) from the phase and magnitude of the common-base current gain, α(ω), which itself was directly extracted from measured S-parameter data. The method is applied to InGaP/GaAs single and double HBT's. A smaller cutoff frequency in the latter device is attributed to τB and τC due to two effects: trapping of electrons in the conduction band triangular barrier existing at the base-collector (B-C) heterojunction and smaller saturation velocity of electrons in InGaP as compared to GaAs. Finally, a new B-C design of InGaP/GaAs DNBT's is proposed to partially compensate the transit time effects. Numerical simulation of the cutoff frequency demonstrates the superiority of the proposed structure for high-frequency applications

Item Type:Article
Status:Published
Refereed:Yes
Glasgow Author(s):Khalid, Dr Ata-ul-Habib
Authors: Sotoodeh, M., Khalid, A.H., Sheng, H., Amin, F.A., Gokdemir, T., Rezazadeh, A.A., Knights, A.P., and Button, C.C.
Subjects:Q Science > QC Physics
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:IEEE Transactions on Electron Devices
ISSN:0018-9383

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