Empirical low-field mobility model for III-V compounds applicable in device simulation codes

Sotoodeh, M., Khalid, A.H. and Rezazadeh, A.A. (2000) Empirical low-field mobility model for III-V compounds applicable in device simulation codes. Journal of Applied Physics, 87(6), pp. 2890-2900. (doi:10.1063/1.372274)

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A Caughey–Thomas-like mobility model with temperature and composition dependent coefficients is used in this work to describe the dependence of electron and hole mobilities on temperature, doping concentration, and alloy composition. Appropriate parameter sets are given for a large number of III–V binary and ternary compounds, including: GaAs, InP, InAs, AlAs, GaP, Al0.3Ga0.7As, In0.52Al0.48As, In0.53Ga0.47As, and In0.49Ga0.51P. Additionally, physically justifiable interpolation schemes are suggested to find the mobilities of various ternary and quaternary compounds (such as AlxGa1−xAs, In1−xGaxP, In1−xGaxAs, In1−xAlxAs, and In1−xGaxAsyP1−y) in the entire range of composition. The models are compared with numerous measured Hall data in the literature and very good agreement is observed. The limitations of the present model are also discussed. The results of this work should be extremely useful in device simulation packages, which are currently lacking a reliable mobility model for the above materials. © 2000 American Institute of Physics.

Item Type:Articles
Glasgow Author(s) Enlighten ID:Khalid, Dr Ata
Authors: Sotoodeh, M., Khalid, A.H., and Rezazadeh, A.A.
Subjects:Q Science > QC Physics
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Journal of Applied Physics

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