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DC characterisation of HBTs using the observed kink effect on the base current

Sotoodeh, M., Khalid, A.H., and Rezazadeh, A.A. (1998) DC characterisation of HBTs using the observed kink effect on the base current. Solid-State Electronics, 42 (4). pp. 531-539. ISSN 0038-1101 (doi:10.1016/S0038-1101(97)00214-1)

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Abstract

Large parasitic series resistances of the heterostructure bipolar transistors are shown to cause a sharp rise in the base current of the Gummel plot at high current levels. This effect is analysed and attributed to a forward-biased base–collector junction due to the large voltage drop across the collector series resistance of the device. The occurrence of this effect results in a severe reduction in current gain of the device at high current levels. A DC Ebers–Moll model is presented with all the parameters extracted from DC characterisation of the HBT, and an excellent fit between the model and experimental data is obtained. The method can be used to determine the base, collector and emitter series resistances of the bipolar transistors for DC applications. Finally, the effect of temperature on the onset of this effect is demonstrated.

Item Type:Article
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Khalid, Dr Ata-ul-Habib
Authors: Sotoodeh, M., Khalid, A.H., and Rezazadeh, A.A.
Subjects:Q Science > QC Physics
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Solid-State Electronics
ISSN:0038-1101

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