Numerical modelling of AlGaAs/GaAs and InGaP/GaAs single and double HBTs

Sotoodeh, M., Khalid, A.H. and Rezazadeh, A.A. (1997) Numerical modelling of AlGaAs/GaAs and InGaP/GaAs single and double HBTs. In: Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications (EDMO), London, UK, 24-25 Nov 1997, pp. 223-228. (doi:10.1109/EDMO.1997.668603)

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The dc characteristics of a graded AlGaAs/GaAs single HBT (SHBT) and an abrupt InGaP/GaAs double HBT (DHBT) are studied using a thermionic-field emission boundary condition model. The model incorporates tunnelling and thermionic emission into a one-dimensional drift-diffusion numerical scheme and accounts for carrier degeneracy and bandgap narrowing. To our best knowledge, this is the first ever reported numerical analysis of InGaP/GaAs HBTs. A variety of existing data from different sources is analysed to find the best theoretical/empirical relations for the bandgap and transport related parameters of In1-xGaxP. The room temperature calculated Gummel plots and common-emitter output characteristics are compared to the experimentally measured ones and a good fit is observed between the two results. Finally, the simulated variation of current gain with temperature in various devices will be demonstrated.

Item Type:Conference Proceedings
Glasgow Author(s) Enlighten ID:Khalid, Dr Ata
Authors: Sotoodeh, M., Khalid, A.H., and Rezazadeh, A.A.
Subjects:T Technology > TK Electrical engineering. Electronics Nuclear engineering
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering

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