Reliability investigation of implanted microwave InGaP/GaAs HBTs

Rezazadeh, A.A., Khalid, A.H. and Sotoodeh, M. (2001) Reliability investigation of implanted microwave InGaP/GaAs HBTs. Materials Science and Engineering B: Solid-State Materials for Advanced Technology, 80(1-3), pp. 274-278. (doi:10.1016/S0921-5107(00)00654-1)

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Abstract

In this paper, we report the fabrication and characterisation of C-doped InGaP/GaAsmicrowaveHBTs using a planar self-aligned technology based on O+/H+ or O+/He+ implant isolation schemes. We observed current gain variations with emitter/base geometries in the H+implantedHBTs while no such variation was observed in the He+implanted transistors. This latter phenomenon is characterised by a current gain increase in the smaller device and this was attributed to a decrease of the hole concentration in the base, caused by the formation of CH complexes in the C-doped GaAs base region. We therefore recommend the use of O+/He+ implant scheme for the fabrication of reliable high performance C-doped base HBTs.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Khalid, Dr Ata-ul-Habib
Authors: Rezazadeh, A.A., Khalid, A.H., and Sotoodeh, M.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Materials Science and Engineering B: Solid-State Materials for Advanced Technology
ISSN:0921-5107
Published Online:13 April 2001

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