Rezazadeh, A.A., Bashar, S.A., Sheng, H., Amin, F.A., Khalid, A.H., Sotoodeh, M., Fantini, F., and Liou, J.J. (1999) Reliability investigation of InGaP/GaAs HBTs under current and temperature stress. Microelectronics Reliability, 39(12), pp. 1809-1816. (doi:10.1016/S0026-2714(99)00189-4)
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The reliability of InGaP/GaAs N–p–n heterojunction bipolar transistors (HBTs) with different base metal contact systems (Au/Zn/Au, Ti/Au, Ti/Pt/Au and the novel Ti/ZrB2/Au) undercurrent and temperaturestress is studied in this paper. We further report results of currentstress on three p-GaAs doping impurities namely Zn, Be and C. The effect of O+/H+ and O+/He+ ions, used in the fabrication of planar self-aligned HBTs, is also investigated in the stability of device dc current gain. The instability phenomena typical of each factors and their effects on the HBT characteristics are repor
|Glasgow Author(s) Enlighten ID:||Khalid, Dr Ata-ul-Habib|
|Authors:||Rezazadeh, A.A., Bashar, S.A., Sheng, H., Amin, F.A., Khalid, A.H., Sotoodeh, M., Fantini, F., and Liou, J.J.|
|College/School:||College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering|
|Journal Name:||Microelectronics Reliability|
|Published Online:||2 December 1999|