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Reliability investigation of InGaP/GaAs HBTs under current and temperature stress

Rezazadeh, A.A., Bashar, S.A., Sheng, H., Amin, F.A., Khalid, A.H., Sotoodeh, M., Fantini, F., and Liou, J.J. (1999) Reliability investigation of InGaP/GaAs HBTs under current and temperature stress. Microelectronics Reliability, 39 (12). pp. 1809-1816. ISSN 0026-2714 (doi:10.1016/S0026-2714(99)00189-4)

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Abstract

The reliability of InGaP/GaAs N–p–n heterojunction bipolar transistors (HBTs) with different base metal contact systems (Au/Zn/Au, Ti/Au, Ti/Pt/Au and the novel Ti/ZrB2/Au) undercurrent and temperaturestress is studied in this paper. We further report results of currentstress on three p-GaAs doping impurities namely Zn, Be and C. The effect of O+/H+ and O+/He+ ions, used in the fabrication of planar self-aligned HBTs, is also investigated in the stability of device dc current gain. The instability phenomena typical of each factors and their effects on the HBT characteristics are repor

Item Type:Article
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Khalid, Dr Ata-ul-Habib
Authors: Rezazadeh, A.A., Bashar, S.A., Sheng, H., Amin, F.A., Khalid, A.H., Sotoodeh, M., Fantini, F., and Liou, J.J.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Microelectronics Reliability
ISSN:0026-2714
Published Online:2 December 1999

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