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Fabrication and characterisation of transparent-gate field effect transistors using indium tin oxide

Khalid, A.H., and Rezazadeh, A.A. (1996) Fabrication and characterisation of transparent-gate field effect transistors using indium tin oxide. IEE Proceedings: Optoelectronics, 143 (1). pp. 7-11. ISSN 1350-2433 (doi:10.1049/ip-opt:19960083)

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Abstract

Ion-implanted GaAs MESFETs with transparent indium oxide (ITO) gate electrodes have been fabricated using both sputtered and evaporated ITO gates. High-quality ITO films with transparency greater than 90% and low sheet resistance of 8Ω/□ have been used in the fabrication of RF sputtered transparent gates. Transparent-gate FETs have also been fabricated using thermally evaporated ITO which have shown excellent electrical device performance comparable to the conventional GaAs MESFET. The optical responsivity of these devices is about 4.5 A/W for a radiation wavelength of 6328 Å. Fabrication details are also discussed for optoelectronic devices with transparent electrodes where the fine-structure processing are not compatible with standard lithography techniques.

Item Type:Article
Keywords:Gallium arsenide tsansistor, IT0 gate fingers, optical control of microwave devices, transparent-gate MESFEP
Status:Published
Refereed:Yes
Glasgow Author(s):Khalid, Dr Ata-ul-Habib
Authors: Khalid, A.H., and Rezazadeh, A.A.
Subjects:T Technology > TK Electrical engineering. Electronics Nuclear engineering
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:IEE Proceedings: Optoelectronics
Publisher:IEE
ISSN:1350-2433

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