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Multilayer passive components for uniplanar Si/SiGe MMICs

Gokdemir, T., Karacaoglu, U., Budimir, D., Economides, S.B., Khalid, A., Rezazadeh, A.A., and Robertson, I.D. (1997) Multilayer passive components for uniplanar Si/SiGe MMICs. In: IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, 8-11 June 1997, Denver, CO.

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Abstract

This paper describes results for novel multilayer passive components, fabricated on silicon substrates for Si/SiGe uniplanar MMICs. Results are compared for high resistivity silicon, high resistivity silicon with an added polyimide layer, and silicon with silicon dioxide (to represent SOI bonded silicon technology). The components that have been characterized include CPW and TFMS transmission lines and couplers, inductors, capacitors, and planar transformers.

Item Type:Conference Proceedings
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Khalid, Dr Ata-ul-Habib
Authors: Gokdemir, T., Karacaoglu, U., Budimir, D., Economides, S.B., Khalid, A., Rezazadeh, A.A., and Robertson, I.D.
Subjects:T Technology > TK Electrical engineering. Electronics Nuclear engineering
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering

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