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Observations of low frequency admittance between isolated GaAs structures formed by ion implantation and by epitaxy on epitaxial buffer layers prepared at high and low temperatures

Boroumand, F.A., Khalid, A.H., Hopkinson, M., Swanson, J.G., and Fontaine, C. (1996) Observations of low frequency admittance between isolated GaAs structures formed by ion implantation and by epitaxy on epitaxial buffer layers prepared at high and low temperatures. In: Semiconducting and Insulating Materials 1996: Proceedings of the 9th Conference on Semiconducting and Insulating Materials (SIMC'9), 29 April - 3 May 1996, Toulouse, France. IEEE, New York, USA, pp. 51-54. ISBN 9780780331792

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Abstract

Comparisons have been made of the frequency dependence of the backgate admittance of GaAs structures prepared by MBE on undoped buffer layers prepared at high and low temperatures and of ion implanted structures. A model is offered to explain extra capacitive currents at low frequencies. Inductive and negative resistance behaviours which appear to be related have not been explained. None of these phenomena were apparent in the LT based structures.

Item Type:Book Section
Status:Published
Glasgow Author(s) Enlighten ID:Khalid, Dr Ata-ul-Habib
Authors: Boroumand, F.A., Khalid, A.H., Hopkinson, M., Swanson, J.G., and Fontaine, C.
Subjects:Q Science > QC Physics
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Publisher:IEEE

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