AlN/GaN-based MOS-HEMT technology: processing and device results

Taking, S., MacFarlane, D. and Wasige, E. (2011) AlN/GaN-based MOS-HEMT technology: processing and device results. Active and Passive Electronic Components, 2011(821305), (doi:10.1155/2011/821305)

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Abstract

Process development of AlN/GaN MOS-HEMTs is presented, along with issues and problems concerning the fabrication processes. The developed technology uses thermally grown Al<sub>2</sub>O<sub>3</sub> as a gate dielectric and surface passivation for devices. Significant improvement in device performance was observed using the following techniques: (1) Ohmic contact optimisation using Al wet etch prior to Ohmic metal deposition and (2) mesa sidewall passivation. DC and RF performance of the fabricated devices will be presented and discussed in this paper.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Wasige, Professor Edward
Authors: Taking, S., MacFarlane, D., and Wasige, E.
Subjects:T Technology > TK Electrical engineering. Electronics Nuclear engineering
College/School:College of Science and Engineering > School of Computing Science
College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Active and Passive Electronic Components
Publisher:Hindawi Publishing Corporation
ISSN:0882-7516
Copyright Holders:Copyright © 2011 The Authors
First Published:First published in Active and Passive Electronic Components 2011(821305)
Publisher Policy:Reproduced in accordance with the copyright policy of the publisher

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