AlN/GaN-based MOS-HEMT technology: processing and device results

Taking, S., MacFarlane, D. and Wasige, E. (2011) AlN/GaN-based MOS-HEMT technology: processing and device results. Active and Passive Electronic Components, 2011(821305), (doi: 10.1155/2011/821305)

Abstract

Process development of AlN/GaN MOS-HEMTs is presented, along with issues and problems concerning the fabrication processes. The developed technology uses thermally grown Al₂O₃ as a gate dielectric and surface passivation for devices. Significant improvement in device performance was observed using the following techniques: (1) Ohmic contact optimisation using Al wet etch prior to Ohmic metal deposition and (2) mesa sidewall passivation. DC and RF performance of the fabricated devices will be presented and discussed in this paper.

• Item Type: Articles
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Wasige, Professor Edward
• Authors: Taking, S., MacFarlane, D., and Wasige, E.
• Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering
• College/School: College of Science and Engineering > School of Computing Science; College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
• Journal Name: Active and Passive Electronic Components
• Publisher: Hindawi Publishing Corporation
• ISSN: 0882-7516
• Copyright Holders: Copyright © 2011 The Authors
• First Published: First published in Active and Passive Electronic Components 2011(821305)
• Publisher Policy: Reproduced in accordance with the copyright policy of the publisher