A TEM Nanoanalytical Investigation of Pd/Ge Ohmic Contacts for the Miniaturization and Optimization of n-InGaAs MOSFET Devices

Longo, P., Jansen, W., Merckling, C., Penaud, J., Caymax, M., Thayne, I. and Craven, A. (2010) A TEM Nanoanalytical Investigation of Pd/Ge Ohmic Contacts for the Miniaturization and Optimization of n-InGaAs MOSFET Devices. In: Electron Microscopy and Analysis Group Conference, Sheffield, England, 8-11 September 2009, 012037. (doi:10.1088/1742-6596/241/1/012037)

Longo, P., Jansen, W., Merckling, C., Penaud, J., Caymax, M., Thayne, I. and Craven, A. (2010) A TEM Nanoanalytical Investigation of Pd/Ge Ohmic Contacts for the Miniaturization and Optimization of n-InGaAs MOSFET Devices. In: Electron Microscopy and Analysis Group Conference, Sheffield, England, 8-11 September 2009, 012037. (doi:10.1088/1742-6596/241/1/012037)

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Publisher's URL: http://dx.doi.org/10.1088/1742-6596/241/1/012037

Abstract

In this paper, a nanoanalytical investigation of electron beam evaporated PdGe ohmic contacts onto an n+ In0.53Ga0.47As layer using electron energy loss spectroscopy (EELS) is presented. The chemical information reported in this paper has been obtained using EELS spectrum images (SI) that allow not only depth resolution but also spatial resolution which is essential in such inhomogeneous systems.

Item Type:Conference Proceedings
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Longo, Dr Paolo and Thayne, Professor Iain and Craven, Professor Alan
Authors: Longo, P., Jansen, W., Merckling, C., Penaud, J., Caymax, M., Thayne, I., and Craven, A.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Journal of Physics: Conference Series
ISSN:1742-6596

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