Processing of 50 nm gate-length hydrogen terminated diamond FETs for high frequency and high power applications

Moran, D.A.J. , MacLaren, D. A. , Porro, S., McLelland, H., John, P. and Wilson, J.I.B. (2011) Processing of 50 nm gate-length hydrogen terminated diamond FETs for high frequency and high power applications. Microelectronic Engineering, 88(8), pp. 2691-2693. (doi:10.1016/j.mee.2010.11.029)

Moran, D.A.J. , MacLaren, D. A. , Porro, S., McLelland, H., John, P. and Wilson, J.I.B. (2011) Processing of 50 nm gate-length hydrogen terminated diamond FETs for high frequency and high power applications. Microelectronic Engineering, 88(8), pp. 2691-2693. (doi:10.1016/j.mee.2010.11.029)

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Publisher's URL: http://dx.doi.org/10.1016/j.mee.2010.11.029

Abstract

To better understand the intrinsic scaling limitations of sub-100 nm gate-length hydrogen-terminated diamond Field Effect Transistors (FETs), the fabrication and DC characterisation of 50 nm gate length devices have been investigated. Physical processing of the hydrogenated diamond surface presents a challenge for the realisation of short gate length, high performance devices due to the inherent sensitivity of the surface to device processing. Through the development of a finely optimised device fabrication process, we have demonstrated transistor operation at a reduced gate length of 50 nm. This is believed to be the shortest gate length operational diamond transistor yet reported. Inspection of device operation at larger voltages indicates the onset of potential short channel effects, attributed to the reduced dimensions of the gate. This is an important result in the investigation of the high frequency and high power potential of hydrogen terminated diamond transistors.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Moran, Dr David and MacLaren, Dr Donald
Authors: Moran, D.A.J., MacLaren, D. A., Porro, S., McLelland, H., John, P., and Wilson, J.I.B.
Subjects:Q Science > QC Physics
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
College of Science and Engineering > School of Physics and Astronomy
Journal Name:Microelectronic Engineering
Publisher:Elsevier BV
ISSN:0167-9317
ISSN (Online):1873-5568
Published Online:23 November 2010

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Project CodeAward NoProject NamePrincipal InvestigatorFunder's NameFunder RefLead Dept
450861Ultra short gate length diamond FETs for high power/high frequency applicationsDavid MoranEngineering & Physical Sciences Research Council (EPSRC)EP/E054668/1ENG - ENGINEERING ELECTRONICS & NANO ENG