Moran, D.A.J. , Fox, O.J.L., McLelland, H., Russell, S. and May, P.W. (2011) Scaling of hydrogen-terminated diamond FETs to Sub-100-nm gate dimensions. IEEE Electron Device Letters, 32(5), pp. 599-601. (doi: 10.1109/LED.2011.2114871)
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Abstract
We present the dc operation of hydrogen-terminated diamond field-effect transistors (FETs) with gate lengths of 1 μm to 50 nm. The 50-nm device metrics include a maximum drain current of 290 mA/mm and a peak extrinsic transconductance of 95 mS/mm. As the device gate length is reduced, peak intrinsic transconductance is increased substantially to a value of 650 mS/mm for the 50-nm device. A minimum I<sub>on</sub>/I<sub>off</sub> ratio of ~ 1.5 × 104 is maintained at this reduced gate dimension. These results appear highly promising for the improvement of hydrogen-terminated diamond FET high-frequency performance through reduction of the device gate length to sub-100-nm dimensions.
| Item Type: | Articles |
|---|---|
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Russell, Dr Stephen and McLelland, Mrs Helen and Moran, Professor David |
| Authors: | Moran, D.A.J., Fox, O.J.L., McLelland, H., Russell, S., and May, P.W. |
| Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering |
| College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
| Journal Name: | IEEE Electron Device Letters |
| ISSN: | 0741-3106 |
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