Electrical type conversion of p-type HgCdTe induced by nanoimprinting

Martyniuk, M. et al. (2011) Electrical type conversion of p-type HgCdTe induced by nanoimprinting. Journal of Applied Physics, 109(9), 096102. (doi:10.1063/1.3582062)

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Abstract

A nanoimprinting method was used to generate square imprints and arrays of imprints ranging in lateral dimension from 1 μm to 50 μm in p-type HgCdTe. Laser Beam Induced Current (LBIC) characterization shows electrical type conversion around each imprint and imprint array. The LBIC signal intensity surface maps of imprinted regions and their dependence with measurement temperature correspond well with surface maps of n-on-p HgCdTe photodiodes formed by conventional techniq

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Ironside, Professor Charles and Macintyre, Dr Douglas and Thoms, Dr Stephen
Authors: Martyniuk, M., Sewell, R.H., Westerhout, R., Umana-Membreno, G.A., Musca, C.A., Dell, J.M., Antoszewski, J., Faraone, L., Macintyre, D.S., Thoms, S., and Ironside, C.N.
Subjects:T Technology > TK Electrical engineering. Electronics Nuclear engineering
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Journal of Applied Physics
ISSN:0021-8979
Published Online:13 May 2011

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