Low damage fully self-aligned replacement gate process for fabricating deep sub-100 nm gate length GaAs metal-oxide-semiconductor field-effect transistors

Li, X. , Bentley, S., McLelland, H., Holland, M., Zhou, H., Thoms, S. , Macintyre, D. and Thayne, I. (2010) Low damage fully self-aligned replacement gate process for fabricating deep sub-100 nm gate length GaAs metal-oxide-semiconductor field-effect transistors. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 28(6), C6L1. (doi:10.1116/1.3501355)

Li, X. , Bentley, S., McLelland, H., Holland, M., Zhou, H., Thoms, S. , Macintyre, D. and Thayne, I. (2010) Low damage fully self-aligned replacement gate process for fabricating deep sub-100 nm gate length GaAs metal-oxide-semiconductor field-effect transistors. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 28(6), C6L1. (doi:10.1116/1.3501355)

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Publisher's URL: http://dx.doi.org/10.1116/1.3501355

Abstract

This article describes a process flow which has enabled the first demonstration of functional, fully self-aligned, 40 nm gate length replacement gate enhancement mode GaAs metal-oxide-semiconductor field-effect transistors (MOSFETs) with Ga<sub>x</sub>Gd<sub>y</sub>O<sub>z</sub> as high-κ dielectric, Pt/Au metal gate stack, and SiN sidewall spacers. The flow uses blanket metal and dielectric deposition and low damage dry etch modules. As a consequence, no critical dimension lift-off processes are required. As a gate replacement approach has been developed, the process is suitable for easily incorporating different gate metals, opening the way to work function engineering to control threshold voltage and so is a significant step forward to the demonstration of high performance “siliconlike” III-V MOSFETs.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Zhou, Dr Haiping and Thayne, Professor Iain and Bentley, Dr Steven and McLelland, Mrs Helen and Thoms, Dr Stephen and Li, Dr Xu and Macintyre, Dr Douglas and Holland, Dr Martin
Authors: Li, X., Bentley, S., McLelland, H., Holland, M., Zhou, H., Thoms, S., Macintyre, D., and Thayne, I.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
ISSN:1071-1023
ISSN (Online):1520-8567

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Project CodeAward NoProject NamePrincipal InvestigatorFunder's NameFunder RefLead Dept
452481Silicon compatible process modules for III-V electronic devices.Iain ThayneEngineering & Physical Sciences Research Council (EPSRC)EP/F002610/1Electronic and Nanoscale Engineering