Longo, P., Holland, M.C., Paterson, G.W. , Craven, A.J. and Thayne, I.G. (2010) An EELS sub-nanometer investigation of the dielectric gate stack for the realization of InGaAs based MOSFET devices. Journal of Physics: Conference Series, 241, 012034. (doi: 10.1088/1742-6596/241/1/012034)
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Publisher's URL: http://dx.doi.org/10.1088/1742-6596/241/1/012034
Abstract
In this paper, a subnanometer investigation of the Ga2O3/GdGaO dielectric gate stack deposited onto InGaAs is presented. Results regarding the influence of the growth conditions on the interface region from a chemical and morphological point of view are presented. The chemical information reported in this paper has been obtained using electron energy loss spectroscopy (EELS) that was carried out in a scanning transmission electron microscope ((S)TEM) showing both spatial and depth resolution.
| Item Type: | Articles |
|---|---|
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Thayne, Prof Iain and Longo, Dr Paolo and Paterson, Dr Gary and Craven, Professor Alan and Holland, Dr Martin |
| Authors: | Longo, P., Holland, M.C., Paterson, G.W., Craven, A.J., and Thayne, I.G. |
| College/School: | College of Science and Engineering > School of Engineering |
| Journal Name: | Journal of Physics: Conference Series |
| ISSN: | 1742-6596 |
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