Donadio, O., Elgaid, K. and Appleby, R. (2011) Waveguide-to-microstrip transition at G-band using elevated E-plane probe. Electronics Letters, 47(2), pp. 115-116. (doi: 10.1049/el.2010.2926)
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Publisher's URL: http://dx.doi.org/10.1049/el.2010.2926
Abstract
A rectangular waveguide-to-microstrip transition operating at G-band is presented. The E-plane probe, used in the transition, is fabricated on semi-insulating gallium arsenide (SI-GaAs) and it is elevated on the substrate. This configuration reduces interaction with semiconductor material. The elevated probe is suitable for direct integration with monolithic microwave integrated circuits. Measured results show S11 better than -10dB between 150 and 200GHz and S21==4dB at centre band (180GHz) for two transitions in back-to-back configuration.
| Item Type: | Articles |
|---|---|
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Elgaid, Dr Khaled and Appleby, Professor Roger |
| Authors: | Donadio, O., Elgaid, K., and Appleby, R. |
| Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering |
| College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
| Journal Name: | Electronics Letters |
| Publisher: | The Institution of Engineering & Technology |
| ISSN: | 0013-5194 |
| ISSN (Online): | 1350-911X |
| Published Online: | 24 January 2011 |
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