Li, C., Khalid, A. , Caldwell, S.H.P., Pilgrim, N.J., Holland, M.C., Dunn, G.M. and Cumming, D.R.S. (2011) Enhancement of power and frequency in Planar Gunn diodes by introducing extra delta-doping layers. Microwave and Optical Technology Letters, 53(7), pp. 1624-1626. (doi: 10.1002/mop.26071)
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Abstract
Planar Gunn diodes operating above 100 GHz fabricated in GaAs/AlGaAs heterojunction structures with single and double δ-doping layers on each side of GaAs channel are numerically studied and experimentally demonstrated. The results show enhanced RF power and oscillation frequency when double δ-doping technique was used. By using a two-dimensional numerical simulation tool, the conduction band profile, electron concentration in the epitaxy layers and current-voltage characteristics are investigated. Simulation results indicate that extra δ-doping layers increase electron confinement in the conducting channel, therefore higher current levels are obtained. Simulated current-voltage characteristics in both cases agree well with experimental results.
| Item Type: | Articles |
|---|---|
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Li, Professor Chong and Cumming, Professor David and Khalid, Dr Ata-Ul-Habib and Holland, Dr Martin |
| Authors: | Li, C., Khalid, A., Caldwell, S.H.P., Pilgrim, N.J., Holland, M.C., Dunn, G.M., and Cumming, D.R.S. |
| Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering |
| College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
| Journal Name: | Microwave and Optical Technology Letters |
| ISSN: | 0895-2477 |
| Published Online: | 22 April 2011 |
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