Enhancement of power and frequency in Planar Gunn diodes by introducing extra delta-doping layers

Li, C., Khalid, A. , Caldwell, S.H.P., Pilgrim, N.J., Holland, M.C., Dunn, G.M. and Cumming, D.R.S. (2011) Enhancement of power and frequency in Planar Gunn diodes by introducing extra delta-doping layers. Microwave and Optical Technology Letters, 53(7), pp. 1624-1626. (doi:10.1002/mop.26071)

Li, C., Khalid, A. , Caldwell, S.H.P., Pilgrim, N.J., Holland, M.C., Dunn, G.M. and Cumming, D.R.S. (2011) Enhancement of power and frequency in Planar Gunn diodes by introducing extra delta-doping layers. Microwave and Optical Technology Letters, 53(7), pp. 1624-1626. (doi:10.1002/mop.26071)

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Abstract

Planar Gunn diodes operating above 100 GHz fabricated in GaAs/AlGaAs heterojunction structures with single and double δ-doping layers on each side of GaAs channel are numerically studied and experimentally demonstrated. The results show enhanced RF power and oscillation frequency when double δ-doping technique was used. By using a two-dimensional numerical simulation tool, the conduction band profile, electron concentration in the epitaxy layers and current-voltage characteristics are investigated. Simulation results indicate that extra δ-doping layers increase electron confinement in the conducting channel, therefore higher current levels are obtained. Simulated current-voltage characteristics in both cases agree well with experimental results.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Li, Dr Chong and Khalid, Dr Ata-ul-Habib and Cumming, Professor David and Holland, Dr Martin
Authors: Li, C., Khalid, A., Caldwell, S.H.P., Pilgrim, N.J., Holland, M.C., Dunn, G.M., and Cumming, D.R.S.
Subjects:T Technology > TK Electrical engineering. Electronics Nuclear engineering
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Microwave and Optical Technology Letters
ISSN:0895-2477
Published Online:22 April 2011

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