Nanoanalysis of a sub-nanometre reaction layer in a metal inserted high-k gate stack

Craven, A., Schaffer, B. and Sarahan, M. (2011) Nanoanalysis of a sub-nanometre reaction layer in a metal inserted high-k gate stack. Microelectronic Engineering, 88(7), pp. 1488-1491. (doi: 10.1016/j.mee.2011.03.084)

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Reactions at the interfaces can occur in metal inserted high-k gate stacks and are likely to evolve during device processing. Such reactions may affect the electrical properties of the stack and hence these could change during processing. The key interfaces are often not atomically flat and characterising the reaction layers on the near atomic scale required is a challenge. Aberration corrected scanning transmission electron microscopy (STEM) and spectrum imaging (SI) using electron energy loss spectroscopy (EELS) is used to characterise an HfN or Hf(O,N) reaction layer, ∼0.25 nm wide, between HfO<sub>2</sub> and TiN. This demonstrates the very significant advances in high spatial resolution characterisation made in recent years.

Item Type:Articles
Glasgow Author(s) Enlighten ID:Schaffer, Dr Bernhard and Sarahan, Dr Michael and Craven, Professor Alan
Authors: Craven, A., Schaffer, B., and Sarahan, M.
Subjects:Q Science > QC Physics
College/School:College of Science and Engineering > School of Physics and Astronomy
Journal Name:Microelectronic Engineering
Publisher:Elsevier BV
ISSN (Online):1873-5568
Published Online:29 March 2011
Copyright Holders:Copyright © 2011 Elsevier B.V.
First Published:First published in Microelectronic Engineering 88 (7) : 1488-1491
Publisher Policy:Reproduced in accordance with the copyright policy of the publisher.

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