Craven, A., Schaffer, B. and Sarahan, M. (2011) Nanoanalysis of a sub-nanometre reaction layer in a metal inserted high-k gate stack. Microelectronic Engineering, 88(7), pp. 1488-1491. (doi: 10.1016/j.mee.2011.03.084)
Text
ID52693.pdf 461kB |
Abstract
Reactions at the interfaces can occur in metal inserted high-k gate stacks and are likely to evolve during device processing. Such reactions may affect the electrical properties of the stack and hence these could change during processing. The key interfaces are often not atomically flat and characterising the reaction layers on the near atomic scale required is a challenge. Aberration corrected scanning transmission electron microscopy (STEM) and spectrum imaging (SI) using electron energy loss spectroscopy (EELS) is used to characterise an HfN or Hf(O,N) reaction layer, ∼0.25 nm wide, between HfO<sub>2</sub> and TiN. This demonstrates the very significant advances in high spatial resolution characterisation made in recent years.
Item Type: | Articles |
---|---|
Status: | Published |
Refereed: | Yes |
Glasgow Author(s) Enlighten ID: | Schaffer, Dr Bernhard and Sarahan, Dr Michael and Craven, Professor Alan |
Authors: | Craven, A., Schaffer, B., and Sarahan, M. |
Subjects: | Q Science > QC Physics |
College/School: | College of Science and Engineering > School of Physics and Astronomy |
Journal Name: | Microelectronic Engineering |
Publisher: | Elsevier BV |
ISSN: | 0167-9317 |
ISSN (Online): | 1873-5568 |
Published Online: | 29 March 2011 |
Copyright Holders: | Copyright © 2011 Elsevier B.V. |
First Published: | First published in Microelectronic Engineering 88 (7) : 1488-1491 |
Publisher Policy: | Reproduced in accordance with the copyright policy of the publisher. |
University Staff: Request a correction | Enlighten Editors: Update this record