10-GHz mode-locked extended cavity laser integrated with surface-etched DBR fabricated by quantum-well intermixing

Hou, L. , Haji, M., Dylewicz, R., Bocang, Q. and Bryce, A.C. (2011) 10-GHz mode-locked extended cavity laser integrated with surface-etched DBR fabricated by quantum-well intermixing. IEEE Photonics Technology Letters, 23(2), pp. 82-84. (doi: 10.1109/LPT.2010.2091121)

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Abstract

The 10-GHz passively mode-locked AlGaInAs/InP 1.55- μm extended cavity lasers integrated with optimized surface-etched distributed Bragg mirrors have been fabricated. A quantum-well intermixing process was used to provide low-absorption loss gratings with accurate wavelength control. The lasers produce 2.99-ps sech<sup>2</sup>-pulses with a time-bandwidth product (TBP) of 0.51.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Dylewicz, Dr Rafal and Bryce, Prof Ann and Hou, Dr Lianping and Haji, Dr Mohsin
Authors: Hou, L., Haji, M., Dylewicz, R., Bocang, Q., and Bryce, A.C.
Subjects:T Technology > TK Electrical engineering. Electronics Nuclear engineering
College/School:College of Science and Engineering > School of Engineering
Journal Name:IEEE Photonics Technology Letters
Publisher:Institute of Electrical and Electronics Engineers
ISSN:1041-1135
ISSN (Online):1941-0174
Published Online:20 November 2010

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Project CodeAward NoProject NamePrincipal InvestigatorFunder's NameFunder RefLead Dept
453111High power, high frequency mode-locked semiconductor lasersAnn BryceEngineering & Physical Sciences Research Council (EPSRC)EP/E065112/1Electronic and Nanoscale Engineering