Modifications of luminescent properties of gallium nitride through dislocation engineering and impurity doping

Rahman, F., Johnson, N.P. and De La Rue, R. (2007) Modifications of luminescent properties of gallium nitride through dislocation engineering and impurity doping. In: UK Nitride Consortium Annual Conference, Cambridge, England, 4-5 Jan 2007,

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Item Type:Conference Proceedings
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Johnson, Dr Nigel and Rahman, Dr Faiz and De La Rue, Professor Richard
Authors: Rahman, F., Johnson, N.P., and De La Rue, R.
Subjects:T Technology > TK Electrical engineering. Electronics Nuclear engineering
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering

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