Process development for high Al-content barrier GaN HEMTs

Banerjee, A., Taking, S., Rahman, F. and Wasige, E. (2008) Process development for high Al-content barrier GaN HEMTs. In: UK Nitride Consortium Summer Meeting, Sheffield, UK, 1 July 2008,

Full text not currently available from Enlighten.


Item Type:Conference Proceedings
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Wasige, Professor Edward and Banerjee, Mr Abhishek and Rahman, Dr Faiz
Authors: Banerjee, A., Taking, S., Rahman, F., and Wasige, E.
Subjects:T Technology > TK Electrical engineering. Electronics Nuclear engineering
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering

University Staff: Request a correction | Enlighten Editors: Update this record