Banerjee, A., Taking, S., Rahman, F. and Wasige, E. (2008) Process development for high Al-content barrier GaN HEMTs. In: UK Nitride Consortium Summer Meeting, Sheffield, UK, 1 July 2008,
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Item Type: | Conference Proceedings |
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Status: | Published |
Refereed: | Yes |
Glasgow Author(s) Enlighten ID: | Wasige, Professor Edward and Banerjee, Mr Abhishek and Rahman, Dr Faiz |
Authors: | Banerjee, A., Taking, S., Rahman, F., and Wasige, E. |
Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering |
College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
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