The structure and possible origins of stacking faults in gamma-yttrium disilicate

MacLaren, I. and Richter, G. (2009) The structure and possible origins of stacking faults in gamma-yttrium disilicate. Philosophical Magazine, 89(2), pp. 169-181. (doi: 10.1080/14786430802562132)

Abstract

Parallel stacking faults on (010) planes are frequently observed in hot-pressed Y₂Si₂O₇. A combination of conventional dark-field imaging and high-resolution transmission electron microscopy was used to investigate the structure of these faults and it was found that they consist of the repeat of one layer of the two layer γ-Y₂Si₂O₇ structure with an associated in-plane rigid body displacement. The resulting structure was confirmed by image simulation of high-resolution images from two perpendicular projections. A model for the formation of the stacking faults is proposed as a consequence of a transformation from β-Y₂Si₂O₇ to γ-Y₂Si₂O₇ in the hot pressing.

• Item Type: Articles
• Additional Information: The full text of this document is not available until January 2010 due to publishers embargo.
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: MacLaren, Dr Ian
• Authors: MacLaren, I., and Richter, G.
• Subjects: T Technology > TN Mining engineering. Metallurgy; Q Science > QC Physics
• College/School: College of Science and Engineering > School of Physics and Astronomy
• Research Group: Solid State Physics
• Journal Name: Philosophical Magazine
• Publisher: Taylor and Francis
• ISSN: 1478-6435
• ISSN (Online): 1478-6443
• Copyright Holders: Copyright © 2009 Taylor and Francis
• First Published: First published in Philosophical Magazine 89(2):169-181
• Publisher Policy: Reproduced in accordance with the copyright policy of the publisher.