The structure and possible origins of stacking faults in gamma-yttrium disilicate

MacLaren, I. and Richter, G. (2009) The structure and possible origins of stacking faults in gamma-yttrium disilicate. Philosophical Magazine, 89(2), pp. 169-181. (doi:10.1080/14786430802562132)

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Abstract

Parallel stacking faults on (010) planes are frequently observed in hot-pressed Y2Si2O7. A combination of conventional dark-field imaging and high-resolution transmission electron microscopy was used to investigate the structure of these faults and it was found that they consist of the repeat of one layer of the two layer γ-Y2Si2O7 structure with an associated in-plane rigid body displacement. The resulting structure was confirmed by image simulation of high-resolution images from two perpendicular projections. A model for the formation of the stacking faults is proposed as a consequence of a transformation from β-Y2Si2O7 to γ-Y2Si2O7 in the hot pressing.

Item Type:Articles
Additional Information:The full text of this document is not available until January 2010 due to publishers embargo.
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:MacLaren, Dr Ian
Authors: MacLaren, I., and Richter, G.
Subjects:T Technology > TN Mining engineering. Metallurgy
Q Science > QC Physics
College/School:College of Science and Engineering > School of Physics and Astronomy
Research Group:Solid State Physics
Journal Name:Philosophical Magazine
Publisher:Taylor and Francis
ISSN:1478-6435
ISSN (Online):1478-6443
Copyright Holders:Copyright © 2009 Taylor and Francis
First Published:First published in Philosophical Magazine 89(2):169-181
Publisher Policy:Reproduced in accordance with the copyright policy of the publisher.

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