Use of ZnO thin films as sacrificial templates for metal organic vapor phase epitaxy and chemical lift-off of GaN

Rogers, D.J. et al. (2007) Use of ZnO thin films as sacrificial templates for metal organic vapor phase epitaxy and chemical lift-off of GaN. Applied Physics Letters, 91(7), 071120. (doi:10.1063/1.2770655)

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Publisher's URL: http://dx.doi.org/10.1063/1.2770655

Abstract

Continued development of GaN-based light emitting diodes is being hampered by constraints imposed by current non-native substrates. ZnO is a promising alternative substrate but it decomposes under the conditions used in conventional GaN metal organic vapor phase epitaxy (MOVPE). In this work, GaN was grown on ZnO/c-Al2O3 using low temperature/pressure MOVPE with N2 as a carrier and dimethylhydrazine as a N source. Characterization confirmed the epitaxial growth of GaN. The GaN was lifted-off the c-Al2O3 by chemically etching away the ZnO underlayer. This approach opens up the way for bonding of the GaN onto a support of choice.

Item Type:Articles
Keywords:aluminium compounds, gallium compounds, III-V semiconductors, nitrogen, semiconductor thin films, sputter etching, vapour phase epitaxial growth, wide band gap semiconductors, zinc compounds
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:McGrouther, Dr Damien and Chapman, Professor John
Authors: Rogers, D.J., Hosseini Teherani, F., Ougazzaden, A., Gautier, S., Divay, L., Lusson, A., Durand, O., Wyczisk, F., Garry, G., Monteiro, T., Correira, M.R., Peres, M., Neves, A., McGrouther, D., Chapman, J.N., and Razeghi, M.
Subjects:Q Science > QC Physics
College/School:College of Science and Engineering > School of Physics and Astronomy
Journal Name:Applied Physics Letters
Publisher:American Institute of Physics
ISSN:0003-6951

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