Investigation of the origin of the decrease in exchange biasing in Ga+ ion irradiated CoFe/IrMn films

Wang, Y.G., McGrouther, D., McVitie, S., MacKenzie, M. and Chapman, J.N. (2006) Investigation of the origin of the decrease in exchange biasing in Ga+ ion irradiated CoFe/IrMn films. Journal of Applied Physics, 100(7), 073901. (doi:10.1063/1.2354591)

Wang, Y.G., McGrouther, D., McVitie, S., MacKenzie, M. and Chapman, J.N. (2006) Investigation of the origin of the decrease in exchange biasing in Ga+ ion irradiated CoFe/IrMn films. Journal of Applied Physics, 100(7), 073901. (doi:10.1063/1.2354591)

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Abstract

Irradiation of CoFe/IrMn exchange biased bilayers by 30 keV Ga<sup>+</sup> ions leads to a reduction in the exchange biasing. Here we have used various imaging and analytical techniques including high resolution transmission electron microscopy and spectrum imaging based on electron energy-loss spectroscopy to determine how the physical structure of the multilayer changes as a function of irradiation dose. Element mixing across the interfaces is found to be the most important effect although significant grain growth is also observed. Computer simulation, incorporating the effects of collision cascades, can largely account for the experimental observations. The ways in which these changes lead to modification of the magnetic properties are discussed.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:McGrouther, Dr Damien and McVitie, Professor Stephen and MacKenzie, Dr Maureen and Chapman, Professor John
Authors: Wang, Y.G., McGrouther, D., McVitie, S., MacKenzie, M., and Chapman, J.N.
Subjects:Q Science > QC Physics
College/School:College of Science and Engineering > School of Physics and Astronomy
Journal Name:Journal of Applied Physics
Publisher:American Institute of Physics
ISSN:0021-8979
ISSN (Online):1089-7550
Published Online:03 October 2006

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