Growth of GaN by metal organic vapor phase epitaxy on ZnO-buffered c-sapphire substrates

Ougazzaden, A. et al. (2008) Growth of GaN by metal organic vapor phase epitaxy on ZnO-buffered c-sapphire substrates. Journal of Crystal Growth, 310(5), pp. 944-947. (doi:10.1016/j.jcrysgro.2007.11.137)

Ougazzaden, A. et al. (2008) Growth of GaN by metal organic vapor phase epitaxy on ZnO-buffered c-sapphire substrates. Journal of Crystal Growth, 310(5), pp. 944-947. (doi:10.1016/j.jcrysgro.2007.11.137)

Full text not currently available from Enlighten.

Publisher's URL: http://dx.doi.org/10.1016/j.jcrysgro.2007.11.137

Abstract

The materials quality and availability of large-area bulk GaN substrates is currently considered a key problem for the continuing development of improved GaN-based devices. Since industrial fabrication of bulk GaN substrates with suitable materials quality has proven very difficult, the opto-GaN industry is currently based on heteroepitaxy using either c-sapphire or 6H SiC substrates. ZnO is promising as a substrate material for GaN because it has the same wurtzite structure and a relatively small lattice mismatch (not, vert, ∼1.8%). In this study, we have successfully grown GaN by MOVPE on ZnO-buffered c-sapphire. The growth conditions required to both prevent ZnO degradation and grow monocrystal thin film of GaN have been obtained. SEM, HRXRD and micro-Raman characterizations underlined the presence of the two layers GaN and ZnO with high structural quality.

Item Type:Articles
Keywords:A3. MOVPE; B1. GaN; B1. ZnO
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:McGrouther, Dr Damien and Chapman, Professor John
Authors: Ougazzaden, A., Rogers, D.J., Hosseini Teherani, F., Moudakir, T., Gautier, S., Aggerstam, T., Ould Saad, S., Martin, J., Djebbour, Z., Durand, O., Garry, G., Lusson, A., McGrouther, D., and Chapman, J.N.
Subjects:Q Science > QC Physics
College/School:College of Science and Engineering > School of Physics and Astronomy
Journal Name:Journal of Crystal Growth
Publisher:Elsevier
ISSN:0022-0248

University Staff: Request a correction | Enlighten Editors: Update this record