High-Resolution Scanning Electron-Microscopy in Mesoscopic Physics

Williams, D.A., Pettersen, E.K., Paul, D. J. and Ahmed, H. (1993) High-Resolution Scanning Electron-Microscopy in Mesoscopic Physics. In: Microscopy of Semiconducting Materials 1993, Oxford, UK, 5-8 April 1993, pp. 249-252.

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Microfabricated semiconductor structures used for mesoscopic physics experiments usually have structure pertinent to the experiments on length scales from nanometres to millimetres. High resolution scanning electron microscopy is therefore extremely useful as a rapid and versatile characterisation technique, both during and after fabrication. Surface and cross-sectional views of mesoscopic devices are presented, using a range of accelerating voltages from 1 to 30 keV. Sidewall features are seen after reactive ion etching of trenches in silicon and silicon-germanium, which are not observable by any other means. The morphology of ohmic contacts after electron beam rapid thermal annealing is also shown.

Item Type:Conference Proceedings
Additional Information:8th Royal Microscopical Society Conference: Microscopy of Semiconducting Materials 1993 (MSM VIII).
Glasgow Author(s) Enlighten ID:Paul, Professor Douglas
Authors: Williams, D.A., Pettersen, E.K., Paul, D. J., and Ahmed, H.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Research Group:Semiconductor Devices

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