Si1-xGex pulsed plasma etching using CHF3 and H-2

Paul, D.J. , Law, V.J. and Jones, G.A.C. (1995) Si1-xGex pulsed plasma etching using CHF3 and H-2. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 13(6), pp. 2234-2237. (doi:10.1116/1.588055)

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Abstract

Selective reactive ion etching of Si over Si1−xGex and Si1−xGex over Si has been demonstrated by using a modulation‐frequency, plasma‐etch technique which employs CHF3 and H2 as the etch precursor gases. The selective etch crossover region appears at a modulation frequency of 2–3 Hz for a duty cycle of 50%. It is suggested that the etch selectivity phenomenon arises from the relative ion‐assisted and purely chemical components of the radio frequency plasma and decaying plasma afterglow.

Item Type:Articles
Additional Information:The work was supported by the Engineering and Physical Sciences Research Council.
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Paul, Professor Douglas
Authors: Paul, D.J., Law, V.J., and Jones, G.A.C.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Research Group:Semiconductor Devices
Journal Name:Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Publisher:American Institute of Physics
ISSN:2166-2746
ISSN (Online):2166-2754

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