Electron beam induced damage of silicon germanium

Paul, D.J. , Ryan, J.M., Pepper, M., Broers, A.N., Whall, T.E., Fernandez, J.M. and Joyce, B.A. (1997) Electron beam induced damage of silicon germanium. Microelectronic Engineering, 35(1-4), pp. 59-62. (doi:10.1016/S0167-9317(96)00147-5)

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The damage to modulation-doped pseudomorphic SiGe channels was investigated for a typical 40 keV electron beam lithography resist technique and also a high resolution 300 keV direct write SiO2 patterning technique. Annealing studies on the irradiated samples were also performed. Results show that the 40 keV technique only creates insignificant amounts of surface damage while the 300 keV technique creates significant damage even at deep, strained SiGe quantum wells. Annealing can be used to reduce the 40 keV damage but has little effect on the 300 keV damage. A number of narrow channel devices were fabricated to assess the range of the 300 keV damage.

Item Type:Articles
Additional Information:Micro and Nano Engineering Conference 1996 (MNE 96), Glasgow, Scotland, 22-25 September, 1996.
Glasgow Author(s) Enlighten ID:Paul, Professor Douglas
Authors: Paul, D.J., Ryan, J.M., Pepper, M., Broers, A.N., Whall, T.E., Fernandez, J.M., and Joyce, B.A.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Research Group:Semiconductor Devices
Journal Name:Microelectronic Engineering
ISSN (Online):1873-5568

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