Cyclotron resonance measurements of Si/SiGe two-dimensional electron gases with differing strain

Griffin, N., Arnone, D.D., Paul, D.J. , Pepper, M., Robbins, D.J., Churchill, A.C. and Fernandez, J.M. (1998) Cyclotron resonance measurements of Si/SiGe two-dimensional electron gases with differing strain. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 16(3), pp. 1655-1658. (doi:10.1116/1.589955)

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Abstract

Far-infrared cyclotron resonance measurements have been used to investigate the effective mass in the strained silicon channels of modulation-doped, two-dimensional electron gases grown on relaxed Si1−xGex. By using a range of Ge fractions x, the effect of strain was investigated. Consistent results were obtained when the resonance positions were fitted to a model for zero-dimensional confinement, yielding m*≈0.196 me for most samples. The use of this formula was justified by invoking electron localization due to a disorder potential. The observed confinement effect was strongest in two samples where the Si channel was partially relaxed, suggesting this to be a possible mechanism. Qualitatively different results were obtained for a sample with a high background concentration of donor impurities, indicating that the type of disorder present can affect the nature of the resonances.

Item Type:Articles
Additional Information:16th North American Conference on Molecular Beam Epitaxy, Ann Arbor, Michigan, 05-08 October, 1997. Three of the authors (N.G., D.J.P., and M.P.) are supported by the EPSRC.
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Paul, Professor Douglas
Authors: Griffin, N., Arnone, D.D., Paul, D.J., Pepper, M., Robbins, D.J., Churchill, A.C., and Fernandez, J.M.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Research Group:Semiconductor Devices
Journal Name:Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Publisher:American Institute of Physics
ISSN:2166-2746
ISSN (Online):2166-2754

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