Griffin, N., Arnone, D.D., Paul, D.J. , Pepper, M., Robbins, D.J., Churchill, A.C. and Fernandez, J.M. (1998) Cyclotron resonance measurements of Si/SiGe two-dimensional electron gases with differing strain. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 16(3), pp. 1655-1658. (doi: 10.1116/1.589955)
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Abstract
Far-infrared cyclotron resonance measurements have been used to investigate the effective mass in the strained silicon channels of modulation-doped, two-dimensional electron gases grown on relaxed Si1−xGex. By using a range of Ge fractions x, the effect of strain was investigated. Consistent results were obtained when the resonance positions were fitted to a model for zero-dimensional confinement, yielding m*≈0.196 me for most samples. The use of this formula was justified by invoking electron localization due to a disorder potential. The observed confinement effect was strongest in two samples where the Si channel was partially relaxed, suggesting this to be a possible mechanism. Qualitatively different results were obtained for a sample with a high background concentration of donor impurities, indicating that the type of disorder present can affect the nature of the resonances.
Item Type: | Articles |
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Additional Information: | 16th North American Conference on Molecular Beam Epitaxy, Ann Arbor, Michigan, 05-08 October, 1997. Three of the authors (N.G., D.J.P., and M.P.) are supported by the EPSRC. |
Status: | Published |
Refereed: | Yes |
Glasgow Author(s) Enlighten ID: | Paul, Professor Douglas |
Authors: | Griffin, N., Arnone, D.D., Paul, D.J., Pepper, M., Robbins, D.J., Churchill, A.C., and Fernandez, J.M. |
College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
Research Group: | Semiconductor Devices |
Journal Name: | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures |
Publisher: | American Institute of Physics |
ISSN: | 2166-2746 |
ISSN (Online): | 2166-2754 |
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