Electrical properties and uniformity of two dimensional electron gases grown on cleaned SiGe virtual substrates

Paul, D.J. , Ahmed, A., Pepper, M., Churchill, A.C., Robbins, D.J., Wallis, D.J. and Pidduck, A.J. (1998) Electrical properties and uniformity of two dimensional electron gases grown on cleaned SiGe virtual substrates. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 16(3), pp. 1644-1647. (doi:10.1116/1.589953)

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Abstract

The low temperature electrical properties of modulation-doped two dimensional electron gases (2DEGs) in the SiGe system were studied. The effects on the electrical properties of removing the substrate from the growth chamber after the growth of the virtual substrate, chemically cleaning the virtual substrate, and then growing the modulation-doped structure on a thin SiGe buffer were investigated. The results demonstrate that the carrier density and mobility decrease as the regrowth interface is moved closer to the 2DEG. The uniformity of the regrown wafers was also investigated. A monotonic increase in carrier density and a decrease in mobility were observed towards the edge of the wafers. Appropriate mechanisms will be discussed.

Item Type:Articles
Additional Information:16th North American Conference on Molecular Beam Epitaxy, Ann Arbor, Michigan, 05-08 October, 1997. The work in this article was supported by EPSRC. One of the authors (A.A.) wishes to acknowledge the Defence Evaluation and Research Agency for a CASE award.
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Paul, Professor Douglas
Authors: Paul, D.J., Ahmed, A., Pepper, M., Churchill, A.C., Robbins, D.J., Wallis, D.J., and Pidduck, A.J.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Research Group:Semiconductor Devices
Journal Name:Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Publisher:American Institute of Physics
ISSN:2166-2746
ISSN (Online):2166-2754

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