Silicon germanium heterostructures in electronics: the present and the future

Paul, D.J. (1998) Silicon germanium heterostructures in electronics: the present and the future. Thin Solid Films, 321, pp. 172-180. (doi:10.1016/S0040-6090(98)00469-6)

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Abstract

A review is presented of Si/Si1−xGex heterostructures which may be used for electronic transistors along with more exotic designs of electrical devices including quantum effect devices. Important issues including integration of the devices with present technology along with defect problems will be presented. The final section will explore exotic quantum devices and review the potential for different SiGe devices to reach the market place.

Item Type:Articles (Letter)
Additional Information:7th International Symposium on Silicon Molecular Beam Epitaxy, Banff, Canada, 13-17 July, 1997.
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Paul, Professor Douglas
Authors: Paul, D.J.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Research Group:Semiconductor Devices
Journal Name:Thin Solid Films
Publisher:Elsevier
ISSN:0040-6090
ISSN (Online):1879-2731

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