Far-infrared cyclotron resonance study of the effect of strain and localisation in Si/SiGe two dimensional electron gases

Griffin, N., Arnone, D.D., Paul, D.J. , Pepper, M., Robbins, D.J. and Churchill, A.C. (1998) Far-infrared cyclotron resonance study of the effect of strain and localisation in Si/SiGe two dimensional electron gases. Solid-State Electronics, 42(7-8), pp. 1159-1163. (doi:10.1016/S0038-1101(97)00321-3)

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Abstract

Far infrared cyclotron resonance measurements have been used to investigate the effective mass (m*) in the strained silicon channel of modulation-doped, two dimensional electron gases grown on relaxed Si1−xGex. Samples with germanium fractions from 24% to 31% were measured to investigate the influence of strain on m*. Little variation as a function of strain was observed, but for one sample, the resonance position was shifted up in frequency due to localisation effects. This persisted up to higher Landau level filling factors than has been observed previously in other materials systems and was accompanied by a large enhancement in the quantum lifetime.

Item Type:Articles
Additional Information:International Workshop on Nano Physics and Electronics (NPE 97), Tokyo, Japan, 18-20 September, 1997.
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Paul, Professor Douglas
Authors: Griffin, N., Arnone, D.D., Paul, D.J., Pepper, M., Robbins, D.J., and Churchill, A.C.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Research Group:Semiconductor Devices
Journal Name:Solid-State Electronics
Publisher:Elsevier
ISSN:0038-1101
ISSN (Online):1879-2405

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