EBIC of strained Si/SiGe 2DEGs showing lateral electron confinement

Norman, C.E., Griffin, N., Arnone, D.D., Paul, D.J. , Pepper, M., Gallas, B. and Fernandez, J.M. (1998) EBIC of strained Si/SiGe 2DEGs showing lateral electron confinement. Solid State Phenomena, 63-4, pp. 25-32. (doi:10.4028/www.scientific.net/SSP.63-64.25)

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Abstract

Modulation-doped SiGe structures containing a two dimensional electron gas (2DEG) in a strained Si channel have been examined by far infrared (FIR), electron beam induced current (EBIC) and transmission electron microscopy (TEM). An apparent correlation between lateral confinement effects and inhomogeneities in the material beneath the Schottky barrier has been identified. These effects are not due to defects nucleating in the Si channel, but rather, may be associated with the defect structure in the underlying relaxed graded-composition buffer layer.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Paul, Professor Douglas
Authors: Norman, C.E., Griffin, N., Arnone, D.D., Paul, D.J., Pepper, M., Gallas, B., and Fernandez, J.M.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Research Group:Semiconductor Devices
Journal Name:Solid State Phenomena
Publisher:Trans Tech Publications
ISSN:1012-0394
ISSN (Online):1662-9779

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