Silicon quantum integrated circuits - an attempt to fabricate silicon-based quantum devices using CMOS fabrication techniques

Paul, D.J. et al. (1998) Silicon quantum integrated circuits - an attempt to fabricate silicon-based quantum devices using CMOS fabrication techniques. Thin Solid Films, 336(1-2), pp. 130-136. (doi:10.1016/S0040-6090(98)01219-X)

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Abstract

An introduction to the methodology, design concepts, fabrication routes and potential applications is presented of research to fabricate quantum devices on a complementary metal oxide semiconductor (CMOS) fabrication line. Si/Si1−xGex heterostructure field effect transistors, velocity modulation transistors and resonant tunnelling diodes are considered and initial fabrication stages discussed.

Item Type:Articles (Letter)
Additional Information:Symposium on Thin Films Epitaxial Growth and Nanostructures, at the E-MRS Spring Meeting 1998, Strasbourg, France, 16-19 June, 1998. The work in this paper is funded by the European Community under the Esprit Microelectronics Advanced Research Initiative (MEL-ARI), project number 22987 `Silicon Quantum Integrated Circuits' (SiQUIC).
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Paul, Professor Douglas
Authors: Paul, D.J., Coonan, B., Redmond, G., O'Neill, B.J., Crean, M., Hollander, B., Mantl, S., Zozoulenko, I., Berggren, K.F., Lazzari, J.L., Arnaud d'Avitaya, F., and Derrien, J.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Research Group:Semiconductor Devices
Journal Name:Thin Solid Films
Publisher:Elsevier
ISSN:0040-6090
ISSN (Online):1879-2731

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