Silicon-germanium strained layer materials in microelectronics

Paul, D.J. (1999) Silicon-germanium strained layer materials in microelectronics. Advanced Materials, 11(3), pp. 191-204. (doi: 10.1002/(SICI)1521-4095(199903)11:3<191::AID-ADMA191>3.0.CO;2-3)

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Review: The use of Si1–xGex in microelectronics production is appealing not only because it is compatible with existing industrial technology used for the production of silicon‐based microelectronics, but also because the induced strain caused by insertion of a layer of Si1–xGex(see Figure) can significantly improve their performance. The production and properties of these new materials are reviewed.

Item Type:Articles
Glasgow Author(s) Enlighten ID:Paul, Professor Douglas
Authors: Paul, D.J.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Research Group:Semiconductor Devices
Journal Name:Advanced Materials
Publisher:Wiley - V C H Verlag GmbH & Co. KGaA
ISSN (Online):1521-4095

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