Silicon quantum integrated circuits - an attempt to fabricate silicon-based quantum devices using CMOS fabrication techniques

Paul, D. J. et al. (1999) Silicon quantum integrated circuits - an attempt to fabricate silicon-based quantum devices using CMOS fabrication techniques. In: Thin Films Epitaxial Growth and Nanostructures, Strasbourg, 1998, pp. 130-136.

Abstract

An introduction to the methodology, design concepts, fabrication routes and potential applications is presented of research to fabricate quantum devices on a complementary metal oxide semiconductor (CMOS) fabrication line. Si/Si1-xGex heterostructure field effect transistors, velocity modulation transistors and resonant tunnelling diodes are considered and initial fabrication stages discussed.

• Item Type: Conference Proceedings
• Additional Information: Symposium on Thin Films Epitaxial Growth and Nanostructures, at the E-MRS Spring Meeting 1998, Strasbourg, France, 16-19 June, 1998.
• Status: Published
• Refereed: No
• Glasgow Author(s) Enlighten ID: Paul, Professor Douglas
• Authors: Paul, D. J., Coonan, B., Redmond, G., O'Neill, B.J., Crean, G.M., Hollander, B., Mantl, S., Zozoulenko, I., Berggren, K.F., Lazzari, J.L., Arnaud d'Avitaya, F., and Derrien, J.
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
• Research Group: Semiconductor Devices