Investigation of Si/SiGe heterostructure material using non-destructive optical techniques

Coonan, B.P. et al. (2000) Investigation of Si/SiGe heterostructure material using non-destructive optical techniques. Thin Solid Films, 364(1-2), pp. 75-79. (doi: 10.1016/S0040-6090(99)00927-X)

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Characterisation of UHV-CVD (ultra high vacuum chemical vapour deposition) grown Si/SiGe heterostructure field-effect transistor (HFET) material with a buried, strained silicon layer has been carried out using non-destructive optical techniques. The effect of thermal budget on the heterostructure was investigated by annealing samples at temperatures up to 900°C for 5 min and carrying out analysis using Raman back-scattering spectroscopy. An investigation of silicon cap loss due to native oxide removal etches was carried out using phase-modulated variable angle spectroscopic ellipsometry (VASE) and correlated with Rutherford back-scattering spectroscopy (RBS) measurements.

Item Type:Articles
Additional Information:Symposium P: Optical Characterization of Semiconductor Layers and Surfaces at the 1999 E-MRS Spring Conference, Strasbourg, France, 01-04 June, 1999. This work was funded by the European Community under the Esprit Microelectronics Advanced Research Initiative (MEL-ARI), Project No. 22987.
Glasgow Author(s) Enlighten ID:Paul, Professor Douglas
Authors: Coonan, B.P., Griffin, N., Beechinor, J.T., Murtagh, M., Redmond, G., Crean, G.M., Hollander, B., Mantl, S., Bozzo, S., Lazzari, J.-L., Arnaud d'Avitaya, F., Derrien, J., and Paul, D.J.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Research Group:Semiconductor Devices
Journal Name:Thin Solid Films
ISSN (Online):1879-2731

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