Schottky gating high mobility Si/Si1-xGex 2D electron systems

Dunford, R.B., Griffin, N., Paul, D.J. , Pepper, M., Robbins, D.J., Churchill, A.C. and Leong, W.Y. (2000) Schottky gating high mobility Si/Si1-xGex 2D electron systems. Thin Solid Films, 369(1-2), pp. 316-319. (doi:10.1016/S0040-6090(00)00871-3)

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Abstract

A high mobility (3.6×105 cm2/V s) n-type Si/Si1−xGex heterostructure has been Schottky gated using Au metal to cover the whole of the device. Over the front-gate voltage (Vg) range for which there was negligible gate leakage (−0.1 V<Vg<0.1 V), the carrier density could be varied from 1.7×1011 to 4.4×1011 cm−2. Measurements of the quantum lifetime suggested that the quality of the device varied in a manner not indicated by the transport mobility. This may arise from inhomogeneities caused by energy-level broadening. The results can be explained by a surface-roughened Au gate whose influence is negated at zero front-gate voltage due to a frozen-in screening charge in the doping layer.

Item Type:Articles
Additional Information:1st Joint Conference on Silicon Epitaxy and Heterostructures (UC-Si), Zao, Japan, 12-17 September, 1999.
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Paul, Professor Douglas
Authors: Dunford, R.B., Griffin, N., Paul, D.J., Pepper, M., Robbins, D.J., Churchill, A.C., and Leong, W.Y.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Research Group:Semiconductor Devices
Journal Name:Thin Solid Films
Publisher:Elsevier
ISSN:0040-6090
ISSN (Online):1879-2731

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