Dunford, R.B., Griffin, N., Paul, D.J. , Pepper, M., Robbins, D.J., Churchill, A.C. and Leong, W.Y. (2000) Schottky gating high mobility Si/Si1-xGex 2D electron systems. Thin Solid Films, 369(1-2), pp. 316-319. (doi: 10.1016/S0040-6090(00)00871-3)
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Abstract
A high mobility (3.6×105 cm2/V s) n-type Si/Si1−xGex heterostructure has been Schottky gated using Au metal to cover the whole of the device. Over the front-gate voltage (Vg) range for which there was negligible gate leakage (−0.1 V<Vg<0.1 V), the carrier density could be varied from 1.7×1011 to 4.4×1011 cm−2. Measurements of the quantum lifetime suggested that the quality of the device varied in a manner not indicated by the transport mobility. This may arise from inhomogeneities caused by energy-level broadening. The results can be explained by a surface-roughened Au gate whose influence is negated at zero front-gate voltage due to a frozen-in screening charge in the doping layer.
Item Type: | Articles |
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Additional Information: | 1st Joint Conference on Silicon Epitaxy and Heterostructures (UC-Si), Zao, Japan, 12-17 September, 1999. |
Status: | Published |
Refereed: | Yes |
Glasgow Author(s) Enlighten ID: | Paul, Professor Douglas |
Authors: | Dunford, R.B., Griffin, N., Paul, D.J., Pepper, M., Robbins, D.J., Churchill, A.C., and Leong, W.Y. |
College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
Research Group: | Semiconductor Devices |
Journal Name: | Thin Solid Films |
Publisher: | Elsevier |
ISSN: | 0040-6090 |
ISSN (Online): | 1879-2731 |
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