Inverted modulation-doped n-type Si/Si0.77Ge0.23 heterostructures

Dunford, R.B., Ahmed, A., Paul, D.J. , Pepper, M., Churchill, A.C., Robbins, D.J. and Pidduck, A.J. (2000) Inverted modulation-doped n-type Si/Si0.77Ge0.23 heterostructures. Microelectronic Engineering, 53(1-4), pp. 205-208. (doi: 10.1016/S0167-9317(00)00297-5)

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Inverted n-type modulated-doped Si/Si0.77Ge0.23 heterostructures have been prepared usingex-situ ion implantation of a virtual substrate for the doping followed by cleaning and the regrowth of the silicon quantum well in the growth system. At 1.7K sample mobilities of 1.5–7.3×104cm2/Vs and carrier densities of 4.25–14.51×1011cm−2 were obtained. The sample mobility was observed to decrease with increasing ion dose (and carrier density). Clear Shubnikov-de Haas oscillations and quantum Hall effect plateaux were visible, demonstrating the quality of the technique.

Item Type:Articles
Additional Information:25th International Conference on Micro- and Nano-Engineering, Rome, Italy, 21-23 September, 1999. This work was carried out as part of the Technology Group 7 of the UK MoD Corporate Research Programme. A.A. and D.J.P. are supported by EPSRC; A.A. would also like to thank DERA for a CASE award.
Glasgow Author(s) Enlighten ID:Paul, Professor Douglas
Authors: Dunford, R.B., Ahmed, A., Paul, D.J., Pepper, M., Churchill, A.C., Robbins, D.J., and Pidduck, A.J.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Research Group:Semiconductor Devices
Journal Name:Microelectronic Engineering
ISSN (Online):1873-5568

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