Paul, D.J. , Ahmed, A., Churchill, A.C., Robbins, D.J. and Leong, W.Y. (2002) Low-dimensional inverted Si/SiGe modulation-doped electron gases using selective ex-situ ion implantation. Materials Science and Engineering B: Solid-State Materials for Advanced Technology, 89(1-3), pp. 111-115. (doi: 10.1016/S0921-5107(01)00812-1)
Full text not currently available from Enlighten.
Abstract
A novel fabrication technique for selectively modulation-doping strained-Si quantum wells on relaxed Si1−xGex substrates to produce field effect transistors and low dimensional devices is demonstrated using standard silicon processing techniques. Strain–relaxed Si1−xGex buffers were selectively ion implanted ex-situ through a lithographically patterned resist before being chemically cleaned and replaced in the growth chamber to regrow a quantum well and cap layers. Mobilities of up to 49,900 cm2 V−1 s−1 for a carrier density of 9.72×1011 cm−2 at 1.7 K for selectively doped Hall bars have been demonstrated along with wires using the technique.
Item Type: | Articles |
---|---|
Additional Information: | Spring Meeting of the European-Materials-Research-Society, Strasbourg, France, 5-8 June, 2001. |
Status: | Published |
Refereed: | Yes |
Glasgow Author(s) Enlighten ID: | Paul, Professor Douglas |
Authors: | Paul, D.J., Ahmed, A., Churchill, A.C., Robbins, D.J., and Leong, W.Y. |
College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
Research Group: | Semiconductor Devices |
Journal Name: | Materials Science and Engineering B: Solid-State Materials for Advanced Technology |
Publisher: | Elsevier |
ISSN: | 0921-5107 |
ISSN (Online): | 1873-4944 |
University Staff: Request a correction | Enlighten Editors: Update this record