Low-dimensional inverted Si/SiGe modulation-doped electron gases using selective ex-situ ion implantation

Paul, D.J. , Ahmed, A., Churchill, A.C., Robbins, D.J. and Leong, W.Y. (2002) Low-dimensional inverted Si/SiGe modulation-doped electron gases using selective ex-situ ion implantation. Materials Science and Engineering B: Solid-State Materials for Advanced Technology, 89(1-3), pp. 111-115. (doi:10.1016/S0921-5107(01)00812-1)

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Abstract

A novel fabrication technique for selectively modulation-doping strained-Si quantum wells on relaxed Si1−xGex substrates to produce field effect transistors and low dimensional devices is demonstrated using standard silicon processing techniques. Strain–relaxed Si1−xGex buffers were selectively ion implanted ex-situ through a lithographically patterned resist before being chemically cleaned and replaced in the growth chamber to regrow a quantum well and cap layers. Mobilities of up to 49,900 cm2 V−1 s−1 for a carrier density of 9.72×1011 cm−2 at 1.7 K for selectively doped Hall bars have been demonstrated along with wires using the technique.

Item Type:Articles
Additional Information:Spring Meeting of the European-Materials-Research-Society, Strasbourg, France, 5-8 June, 2001.
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Paul, Professor Douglas
Authors: Paul, D.J., Ahmed, A., Churchill, A.C., Robbins, D.J., and Leong, W.Y.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Research Group:Semiconductor Devices
Journal Name:Materials Science and Engineering B: Solid-State Materials for Advanced Technology
Publisher:Elsevier
ISSN:0921-5107
ISSN (Online):1873-4944

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